powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com nx-series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts CM75MX-12A 1 rev. 11/11 description: cibs are low profile and thermally efficient. each module consists of a three-phase diode converter sec - tion, a three-phase inverter section and a brake circuit. a thermistor is included in the package for sens - ing the baseplate temperature. 5th generation cstbt chips yield low loss. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM75MX-12A is a 600v (v ces ), 75 ampere cib power module. type current rating v ces amperes volts (x 50) cm 75 12 outline drawing and circuit diagram dimensions inches millimeters a 4.79 121.7 b 2.44 62.0 c 0.51 13.0 d 4.49 114.05 e 4.330.02 110.00.5 f 3.89 99.0 g 3.72 94.5 h 0.16 4.06 j 0.51 13.09 k 0.15 3.81 l 0.45 11.43 m 0.6 15.24 n 0.22 dia. 5.5 dia. p 2.13 54.2 q 1.53 39.0 r 1.970.02 50.00.5 s 2.26 57.5 t 0.30 7.75 u 0.59 15.0 dimensions inches millimeters v 0.3 7.62 w 0.46 11.66 x 0.16 4.2 y 0.08 dia. 2.1 dia. z 0.27 7.0 aa 0.81 20.5 ab 0.67 17.0 ac 0.12 3.0 ad 0.14 3.5 ae 0.03 0.8 af 0.15 3.75 ag 0.05 1.15 ah 0.025 0.65 aj 0.29 7.4 ak 0.047 1.2 al 0.49 12.5 am 0.06 1.5 an 0.17 dia. 4.3 dia. ap 0.10 dia. 2.5 dia. p1(54-55) t (9-1 0) p(52-53) n(57 -58) co n vdi clampdi fwdi s (5-6) r (1 -2) gwn(32) e s (31) gwp(39) e s wp(38) gvn(33) gvp(44) e s vp(43) gun(34) gup(49) e s up(48) u(1 3-1 4) b(24-25) v(1 7- 18 )w (21 -22) gb(35) n1(60-61) th 2 (29) th 1 (28) det ail "b" a aa j d e f m m kk k k g k k k k l l h ag k ah ak aj z c ab r b p x al y k l n (4 pla ces) ac kk k k k k u t ad v w x v k k k ll lll ae af y am ap an k q m s det ail "b" det ail "a" det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 rev. 11/11 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol CM75MX-12A units inverter part igbt/fwdi collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 70c) *2,*4 i c 75 amperes collector current (pulse) *3 i crm 150 amperes total power dissipation (t c = 25c) *2,*4 p tot 280 watts emitter current *2 i e *1 75 amperes emitter current (pulse) *3 i erm *1 150 amperes brake part igbt/clampdi collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 97c) *2,*4 i c 50 amperes collector current (pulse) *3 i crm 100 amperes total power dissipation (t c = 25c) *2,*4 p tot 280 watts repetitive peak reverse voltage v rrm 600 volts forward current (t c = 25c) *2 i f 50 amperes forward current (pulse) *3 i frm 100 amperes converter part convdi repetitive peak reverse voltage v rrm 800 volts recommended ac input voltage e a 220 volts dc output current (3-phase full wave rectifying, f = 60hz,t c = 125c) *2,*4 i o 75 amperes surge forward current (sine half-wave 1 cycle peak value, f = 60hz, non-repetitive) i fsm 750 amperes current square time (value for one cycle of surge current) i 2 t 2340 a 2 s module isolation voltage (charged part to baseplate, rms, f = 60hz, ac 1 min.) v iso 2500 volts junction temperature t j -40 ~ +150 c storage temperature t stg -40 ~ +125 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 0 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 v p w p w n br v n u n u p tn sn rn rp sp tp 64.2 73.0 77.8 81.4 86.1 91.4 97.9 27.6 34.7 41.2 42.0 25.5 42.9 26.5 29.5 26.6 37.0 47.4 29.5 39.9 50.3 65.5 th 95.5 101. 2 89.6 98.2 74.6 71.0 1 7. 8 27.1 33.6 35.2 dimensions in mm (tolerance: 1mm) igbt fwdi converter diode ntc thermistor chip location (top view) 84.6 u p v p w p w n v n u n br
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 rev. 11/11 electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 5 6 7 volts collector-emitter saturation voltage v ce(sat) t j = 25c, i c = 75a, v ge = 15v *5 1.7 2.1 volts t j = 125c, i c = 75a, v ge = 15v *5 1.9 volts i c = 75a, v ge = 15v, chip *5 1.6 volts input capacitance c ies 7.5 nf output capacitance c oes v ce = 10v, v ge = 0v 1.0 nf reverse transfer capacitance c res 0.3 nf total gate charge q g v cc = 300v, i c = 75a, v ge = 15v 200 nc inductive turn-on delay time t d(on) 100 ns load turn-on rise time t r v cc = 300v, i c = 75a, v ge = 1 5v, 100 ns switch turn-off delay time t d(off) r g = 8.2?, inductive load 300 ns time turn-off fall time t f 600 ns emitter-collector voltage v ec *1 t j = 25c, i e = 75a, v ge = 0v *5 2.0 2.8 volts t j = 125c, i e = 75a, v ge = 0v *5 1.95 volts i e = 75a, v ge = 0v, chip 1.9 volts reverse recovery time t rr *1 v cc = 300v, i e = 75a, v ge = 15v 200 ns reverse recovery charge q rr *1 r g = 8.2?, inductive load 1.8 c internal gate resistance r g t c = 25c, per switch 0 ? external gate resistance r g 8.0 83 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *5 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 rev. 11/11 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units brake part igbt/clampdi collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 5ma, v ce = 0v 5 6 7 volts collector-emitter saturation voltage v ce(sat) t j = 25c, i c = 50a, v ge = 15v *5 1.7 2.1 volts t j = 125c, i c = 50a, v ge = 15v *5 1.9 volts i c = 50a, v ge = 15v, chip 1.6 volts input capacitance c ies 9.3 nf output capacitance c oes v ce = 10v, v ge = 0v 1.0 nf reverse transfer capacitance c res 0.3 nf total gate charge q g v cc = 300v, i c = 50a, v ge = 15v 200 nc internal gate resistance r g t c = 25c 0 ? repetitive reverse current i rrm v r = v rrm 1.0 ma forward voltage drop v f t j = 25c, i f = 50a *5 2.0 2.8 volts t j = 125c, i f = 50a *5 1.95 volts i f = 50a, chip 1.9 volts external gate resistance r g 13 125 ? converter part repetitive peak reverse current i rrm v r = v rrm , t j = 150c 20 ma forward voltage drop v f i f = 75a *5 1.2 1.6 volts ntc thermistor part zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r r 100 = 493?, t c = 100c *4 -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *4 10 mw *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] 0 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 v p w p w n br v n u n u p tn sn rn rp sp tp 64.2 73.0 77.8 81.4 86.1 91.4 97.9 27.6 34.7 41.2 42.0 25.5 42.9 26.5 29.5 26.6 37.0 47.4 29.5 39.9 50.3 65.5 th 95.5 101. 2 89.6 98.2 74.6 71.0 1 7. 8 27.1 33.6 35.2 dimensions in mm (tolerance: 1mm) igbt fwdi converter diode ntc thermistor chip location (top view) 84.6 u p v p w p w n v n u n br
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 5 rev. 11/11 ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side thermal resistance characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per inverter igbt *4 0.44 c/w thermal resistance, junction to case r th(j-c) d per inverter fwdi *4 0.85 c/w thermal resistance, junction to case r th(j-c) q brake igbt *4 0.44 c/w thermal resistance, junction to case r th(j-c) d brake clampdi *4 0.85 c/w thermal resistance, junction to case r th(j-c) d per convdi *4 0.24 c/w contact thermal resistance r th(c-s) case to heatsink, per 1 module 0.015 c/w thermal grease applied *4,*7 mechanical characteristics characteristics symbol test conditions min. typ. max. units mounting torque, m5 mounting screws 31 in-lb module weight (typical) 270 grams isolation voltage, (charged part to baseplate, rms, f = 60hz, ac 1 min.) v iso 2500 volts flatness of baseplate *8 e c 0 to +100 m *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. 0 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 v p w p w n br v n u n u p tn sn rn rp sp tp 64.2 73.0 77.8 81.4 86.1 91.4 97.9 27.6 34.7 41.2 42.0 25.5 42.9 26.5 29.5 26.6 37.0 47.4 29.5 39.9 50.3 65.5 th 95.5 101. 2 89.6 98.2 74.6 71.0 1 7. 8 27.1 33.6 35.2 dimensions in mm (tolerance: 1mm) igbt fwdi converter diode ntc thermistor chip location (top view) 84.6 u p v p w p w n v n u n br
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 rev. 11/11 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 1 10 0 10 -1 10 -2 10 1 0 1 3 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 150a i c = 75a i c = 30a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13 15 9 8 t j = 25 c 150 25 50 75 100 125 collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 150 75 100 125 25 50 v ge = 15v t j = 25c t j = 125c 10 -1 collector current, i c , (amperes) 10 4 10 3 10 0 10 1 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 8.2? t j = 125c inductive load t f 10 2 gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time, (ns) switching time vs. gate resistance (inverter part - typical) t d(off) t d(on) t r v cc = 300v v ge = 15v i c = 75a t j = 125c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 100 300 200 v cc = 300v v cc = 200v i c = 75a emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 v cc = 300v v ge = 15v r g = 8.2? t j = 25c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
CM75MX-12A nx -series cib module (3 ? converter + 3 ? inverter + brake) 75 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 7 rev. 11/11 time, (s) transient thermal impedance characteristics (inverter part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.44c/w (igbt) r th(j-c) = 0.85c/w (fwdi) r th(j-c) = 0.24c/w (converter diode) normalized transient thermal impedance, z th(j-c') time, (s) transient thermal impedance characteristics (brake part - typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.44c/w (igbt) r th(j-c) = 0.85c/w (clamp diode) normalized transient thermal impedance, z th(j-c') gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i c = 75a t j = 125c inductive load 10 2 switching loss vs. gate resistance (inverter part - typical) e on e off gate resistance, r g , (?) reverse recovery switching loss, e rr , (mj/pulse) 10 2 10 0 10 1 10 1 10 -1 10 0 v cc = 300v v ge = 15v i e = 75a t j = 125c inductive load 10 2 reverse recovery switching loss vs. gate resistance (inverter part - typical) emitter current, i e , (amperes) reverse recovery switching loss, e rr , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 v cc = 300v v ge = 15v r g = 8.2? t j = 125c inductive load 10 2 reverse recovery switching loss vs. emitter current (inverter part - typical) e rr e rr v cc = 300v v ge = 15v r g = 8.2? t j = 125c inductive load e on e off collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 1 10 0 10 1 10 0 10 -1 10 2 switching loss vs. collector current (inverter part - typical) 0 1 3 2 4 10 0 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (brake part - typical) 10 2 forward current, i f , (amperes) collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (brake part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 100 75 25 50 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c 0 0.5 1.5 1.0 2.0 10 0 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (converter part - typical) 10 2 10 3 forward current, i f , (amperes) t j = 25c t j = 125c
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